TI announces availability of 2nd generation RFID silicon

Bangalore, Aug 1 (UNI) Texas Instruments today announced the availability of its Electronic Product Code (EPC) Generation (Gen 2) ultra-high frequency (UHF) silicon.

Offered in wafer and strap form factors, TI had developed its Gen 2 silicon on the most advanced analog process node at 130 nanometer and with a built-in Schottky diode for more efficient conversion of radio frequency (RF) signal energy.

The result was silicon chips with low power consumption and increased chip-to-reader sensitivity. Users could also write to TI's chips under the lowest RF power conditions inspite of background electromagnetic interference (EMI) common in typical supply chain factory floor and warehouse environments.

Companies deploying UHF-based RFID systems based on TI's Gen 2 technology could potentially capture a greater percentage of reads on cases and pallets as they move through manufacturing and distribution channels.

The Union Government had de-licensed 865-867 MHz UHF band for RFID usage in India, since March 2005, and there were approximately 50 system integrators and designers of RFID solutions in India who could take advantage of TI's Gen 2 silicon, a TI release here said.

With improved chip-to-reader sensitivity, companies could expect to more accurately track products and packages at all points throughout their supply chain operations and improve process flow.

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